ZXMD63C03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
SYMBOL
V DSS
V GS
N-CHANNEL
30
P-CHANNEL
-30
20
UNIT
V
V
Continuous Drain Current
(V GS =4.5V; T A =25°C)(b)(d)
(V GS =4.5V; T A =70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
I D
I DM
I S
I SM
P D
P D
P D
T j :T stg
2.3
1.8
14
1.5
14
-2.0
-1.6
-9.6
-1.4
-9.6
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R θ JA
R θ JA
R θ JA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - SEPTEMBER 2007
2
相关PDF资料
ZXMD63N02XTC MOSFET DUAL N-CHAN 20V 8MSOP
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